Key Points Gallium nitride (GaN) electronics show promise for operating in extreme temperatures, such as those on Venus. Researchers from MIT and other institutions found that GaN and its ohmic contacts remain stable at 500 degrees Celsius for up to 48 hours. The study involved creating GaN devices and testing their resistance and structural integrity under extreme heat. Findings suggest GaN could be used in high-temperature transistors for applications like Venus exploration and geothermal energy extraction. The surface of Venus,...